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6) High-Speed Electronics Circuit and Device IIOct 01, 2008

  • High-performance InGaAs/InP Composite-channel HEMTs for Millimeter-wave-band Power Amplifi ers (114KB)
  • Low Vertical Leakage Current in GaNbased HEMT on Si(111) Substrate (82KB)
  • 10G Preamplifi er IC with Quick Response for Burst-mode Communications (178KB)

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