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1) Annual Report 2009 Vol.3 Sep 08, 2009

  • Optical Semiconductor Device-2:
    Frequency modulated DBR laser operating at 40 Gb/s     (174KB)
  • High-Speed Electronics Circuit and Device-1:
    Development of InP HBTs with a New Emitter for Suppression of Emitter-Size Effects     (244KB)

  • High-Speed Electronics Circuit and Device-2:
    Ultra-thin InAIP/InGaAs Heterojunctions Grown by Metal-Organic Vapor-Phase Epitaxy     (194KB)

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